rev.4.00 may.19, 2005 page 1 of 6 HAT2203C silicon n channel mos fet power switching rej03g0447-0400 rev.4.00 may 19.2005 features ? low on-resistance r ds(on) = 69 m ? typ.(at v gs = 4.5 v) ? low drive current ? high density mounting ? 2.5 v gate drive device outline renesas package code: pwsf0006ja-a (package name: cmfpak - 6) 1. source 2. drain 3. drain 4. drain 5. drain 6. gate 1 2 3 6 5 4 g d s 6 1 5 d 2 d 3 d 4 index band absolute maximum ratings (ta = 25c) item symbol ratings unit drain to source voltage v dss 20 v gate to source voltage v gss 12 v drain current i d 2 a drain peak current i d (pulse) note1 8 a body - drain diode reverse drain current i dr 2 a channel dissipation pch note2 830 mw channel temperature tch 150 c storage temperature tstg ?55 to +150 c notes: 1. pw 10 s, duty cycle 1% 2. when using the glass epoxy board (fr4 40 x 40 x 1.6mm)
HAT2203C rev.4.00 may.19, 2005 page 2 of 6 electrical characteristics (ta = 25c) item symbol min typ max unit test conditions drain to source breakdown voltage v (br)dss 20 ? ? v i d = 10 ma, v gs = 0 gate to source breakdown voltage v (br)gss 12 i g = 10 a, v ds = 0 gate to source leak current i gss ? ? 10 a v gs = 10 v, v ds = 0 drain to source leak current i dss ? ? 1 a v ds = 20 v, v gs = 0 gate to source cutoff voltage v gs(off) 0.4 ? 1.4 v v ds = 10 v, i d = 1 ma r ds(on) ? 69 90 m ? i d = 1 a, v gs = 4.5 v note3 drain to source on state resistance r ds(on) ? 107 150 m ? i d = 1 a, v gs = 2.5 v note3 forward transfer admittance |yfs| 3 4.5 ? s i d = 1 a, v ds = 10 v note3 input capacitance ciss ? 165 ? pf v ds = 10 v output capacitance coss ? 50 ? pf v gs = 0 reverse transfer capacitance crss ? 20 ? pf f = 1 mhz turn - on delay time t d(on) ? 6 ? ns rise time t r ? 5 ? ns turn - off delay time t d(off) ? 20 ? ns fall time t f ? 4 ? ns i d = 1 a v gs = 10 v r l = 10 ? rg = 4.7 ? total gate charge qg ? 1.8 ? nc gate to source charge qgs ? 0.4 ? nc gate to drain charge qgd ? 0.4 ? nc v dd = 10 v v gs = 4.5 v i d = 2 a body - drain diode forward voltage v df ? 0.8 1.1 v i f = 2 a, v gs = 0 note3 notes: 3. pulse test
HAT2203C rev.4.00 may.19, 2005 page 3 of 6 main characteristics 1600 1200 800 400 0 50 100 150 200 -30 -10 -3 -1 -0.3 -0.1 -0.1 -0.3 -0.01 -1 -3 -10 -30 -100 10 8 6 4 2 0 2 46810 10 8 6 4 2 0 12345 -0.03 -0.01 -100 ta = 25 c,1 shot pulse when using the fr4 board. 1.5 v 2 v tc = 75 c 25 c ? 25 c channel dissipation pch (mw) case temperature ta ( c) power vs. temperature derating drain to source voltage v ds (v) drain current i d (a) maximum safe operation area drain to source voltage v ds (v) drain current i d (a) typical output characteristics pulse test gate to source voltage v gs (v) drain current i d (a) typical transfer characteristics v ds = 10 v pulse test 1 ms pw = 10 ms dc ope ration (ta = 25c) 10 s 10 v 300 200 100 0 24 6 8 10 0.1 10 1 100 100 1000 10 gate to source voltage v gs (v) drain to source saturation voltage vs. gate to source voltage drain current i d (a) static drain to source on state resistance vs. drain current 400 i d = 2 a 1 a 0.5 a pulse test v gs = 2.5v pulse test operation in this area is limited by r ds(on) 2.5 v test conditions: when using the glass epoxy board (fr4 40 x 40 x 1.6 mm) 100 s 3 v 4.5 v v gs = 1 v ta = 25 c 4.5v when using the glass epoxy board (fr4 40 x 40 x 1.6 mm) drain to source saturation voltage v ds(on) (mv) drain to source on state resistance r ds(on) ( ? )
HAT2203C rev.4.00 may.19, 2005 page 4 of 6 200 160 120 80 40 ? 25 0 25 50 75 100 125 150 0 0.03 0.01 0.3 3 10 10 3 1 0.3 0.1 0.03 0.01 0.1 1 case temperature tc ( c) e c n a t s i s e r e t a t s n o e c r u o s o t n i a r d c i t a t s r ) n o ( s d m ( ? ) static drain to source on state resistance vs. temperature drain current i d (a) forward transfer admittance vs. drain current ) s ( | s f y | e c n a t t i m d a r e f s n a r t d r a w r o f 25 c tc = ? 25 c 75 c v ds = 10 v pulse test v gs = 2.5 v pulse test 0.5 a i d = 2 a 1 a 0 8 16 24 3000 1000 10000 100 300 40 0 8 30 6 20 4 10 2 0.8 1.6 2.4 3.2 4.0 0 1000 100 1 10 0.1 0.3 1 3 10 30 100 30 10 3 1 v gs = 0 f = 1 mhz ciss coss crss i d = 2 a v dd v gs ) f p ( c e c n a t i c a p a c drain to source voltage v ds (v) typical capacitance vs. drain to source voltage gate charge qg (nc) v e g a t l o v e c r u o s o t n i a r d s d ) v ( v e g a t l o v e c r u o s o t e t a g s g ) v ( dynamic input characteristics drain current i d (a) ) s n ( t e m i t g n i h c t i w s switching characteristics v dd = 20 v 10 v 5 v t d(on) t d(off) t f t r v dd = 5 v 10 v 20 v 0.5 a 1 a 2 a 41220 0 0.4 0.8 1.2 1.6 2.0 10 4 v gs = 0 , -5 v source to drain voltage v sd (v) reverse drain current vs. source to drain voltage i t n e r r u c n i a r d e s r e v e r r d ) a ( pulse test 5 v 2 6 8 4.5 v
HAT2203C rev.4.00 may.19, 2005 page 5 of 6 vin monitor d.u.t. vin 4.5 v r l v ds = 10 v tr td(on) vin 90% 90% 10% 10% vout td(off) vout monitor 90% 10% t f switching time test circuit switching time waveform 4.7 ?
HAT2203C rev.4.00 may.19, 2005 page 6 of 6 package dimensions d a aa a a a 2 a 1 l l p s s s y b b 2 l 1 m x eh e e e e 1 c pattern of terminal position areas a a 1 a 2 b b 1 c c 1 d e e h e l l p x y b 2 e 1 l 1 0.6 0 0.7 0.15 0.1 1.9 1.6 2.05 0.1 0.15 0.22 0.2 0.13 0.11 2.0 1.7 0.65 2.1 0.2 1.65 0.8 0.01 0.79 0.3 0.15 2.1 1.8 2.15 0.3 0.45 0.05 0.05 0.35 0.5 dimension in millimeters reference symbol min nom max ? 0.0065g mass[typ.] cmfpak-6 / cmfpak-6v pwsf0006ja-a renesas code jeita package code package name b a-a section b 1 c 1 c ordering information part name quantity shipping container HAT2203C-el-e 3000 pcs taping note: for some grades, production may be terminated. please contact the renesas sales office to check the state of production before ordering the product.
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